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Contents |
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Design of Systems on a Chip: Introduction |
7 |
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1. MOORE™S LAW AND THE CONSEQUENCES |
7 |
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2. THE “INTERNATIONAL ROADMAP FOR SEMICONDUCTOR TECHNOLOGY” |
11 |
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3. THE “TECHNOLOGY SHOCKWAVE” |
13 |
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4. THE TYDE OF THE MARKETS |
14 |
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5. THE FIRST BOOK: SEMICONDUCTOR DEVICES AND COMPONENTS |
17 |
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6. REFERENCES |
18 |
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BJT Modeling with VBIC |
19 |
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1. INTRODUCTION |
19 |
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2. VBIC EQUIVALENT NETWORK |
20 |
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3. VBIC MODEL FORMULATION |
22 |
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4. PARAMETER EXTRACTION |
34 |
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5. RELATIONSHIP BETWEEN SGP AND VBIC PARAMETERS |
36 |
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6. VBIC DC MODELING |
37 |
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7. ELECTROTHERMAL EXAMPLES |
39 |
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8. HIGH FREQUENCY MODELING |
40 |
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9. CONCLUSIONS |
45 |
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10. ACKNOWLEDGMENTS |
46 |
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11. REFERENCES |
46 |
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12. BIOGRAPHY |
47 |
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A MOS Transistor Model for Mixed Analog-digital Circuit Design and Simulation |
48 |
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1. INTRODUCTION |
49 |
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2. THE LONG-CHANNEL MODEL |
51 |
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2.1 Transconductance-to-current ratio g |
51 |
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2.2 The static model for the drain current |
57 |
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2.3 Hand calculation model and circuit design |
58 |
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2.4 Vertical field dependent mobility |
59 |
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3. THE STATIC MODEL FOR SHORT AND NARROW GEOMETRIES |
63 |
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3.1 Velocity saturation and channel length modulation ( CLM) |
65 |
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3.2 Charge-sharing and reverse short-channel effect ( RSCE) |
66 |
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3.3 Drain induced barrier lowering (DIBL) |
69 |
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3.4 Gate voltage dependent series resistance |
71 |
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4. THE CHARGE AND THERMAL NOISE MODELS |
73 |
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4.1 Charges integration |
73 |
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4.2 Transcapacitances model |
75 |
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4.3 Noise model |
77 |
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5. MODEL APPLICATION AND EXPERIMENTAL RESULTS |
78 |
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5.1 The computer simulation model |
78 |
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5.2 Hierarchical model structure |
79 |
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5.3 Statistical circuit simulation including matching |
79 |
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5.4 The pinch-off voltage measurement and parameter extraction method |
81 |
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5.5 Parameter extraction sequence |
85 |
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5.6 Experimental results |
87 |
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6. CONCLUSIONS |
91 |
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7. ACKNOWLEDGMENTS |
92 |
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8. REFERENCES |
92 |
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Efficient Statistical Modeling for Circuit Simulation |
95 |
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1. INTRODUCTION |
95 |
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2. CLASSIFICATION OF STATISTICAL MODELS |
97 |
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3. HIERARCHY OF STATISTICAL VARIATIONS |
98 |
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4. PROCESS AND GEOMETRY LEVEL MODELING |
99 |
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5. EXISTING STATISTICAL MODELING APPROACHES |
100 |
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5.1 SPICE model parameter perturbation |
100 |
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5.2 Extreme case data |
101 |
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5.3 Forward propagation of variance |
101 |
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5.4 Numerical data fitting |
103 |
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6. TYPICAL CASE MODELING |
104 |
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7. DISTRIBUTIONAL STATISTICAL MODELING |
105 |
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8. SPECIFIC CASE STATISTICAL MODELING |
108 |
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9. GENERIC CASE STATISTICAL MODELING |
110 |
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10. SPECIFIC MOSFET EXAMPLE |
111 |
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11. CONCLUSIONS |
119 |
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12. REFERENCES |
119 |
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13. BIOGRAPHY |
120 |
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Retargetable Application-driven Analog-digital Block Design |
121 |
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1. INTRODUCTION |
121 |
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2. ANALOG-DIGITAL INTERFACE REQUIREMENTS |
123 |
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3. DESIGN FLOW AND CAD SUPPORT |
125 |
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3.1 Functional hierarchy |
125 |
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3.2 Top-down flow for electrical design |
126 |
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3.3 Bottom-up flow for layout |
129 |
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3.4 CAD limitations |
129 |
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4. RETARGETABLE BLOCK DESIGN |
130 |
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4.1 Retargetable block model |
130 |
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5. EXAMPLES FROM INDUSTRY PRACTICE |
135 |
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5.1 Quadrature D/A RF interface |
135 |
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5.2 Delta-sigma A/D interface |
136 |
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6. CONCLUSIONS |
138 |
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7. ACKNOWLEDGMENTS |
138 |
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8. REFERENCES |
139 |
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Robust Low Voltage Low Power Analog Mos VLSI Design |
140 |
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1. INTRODUCTION |
141 |
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2. LOW VOLTAGE CMOS SAQUARE-LAW COMPOSITE CELLS |
141 |
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3. STATISTICAL VLSI DESIGN TOOLS AND TECHNIQUES |
145 |
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3.1 Statistical Parameter Modeling |
146 |
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3.2 Parameter Variance Models for MOS Device Mismatch |
146 |
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3.3 Statistical Techniques |
149 |
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4. STATISTICAL DESIGN OF THE CMOS SQUARELAW CMOS CELLS |
152 |
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4.1 Example 1: Statistical Simulation of Cell1 |
152 |
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5 ROBUST LOW VOLTAGE OPAMP DESIGN |
159 |
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5.1 Robust Low Voltage Rail-to-Rail Opamp Architecture |
161 |
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6. A SINGLE STAGE OPAMP DESIGN EXAMPLE |
165 |
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7. A TWO STAGE LOW VOLTAGE OPAMP DESIGN |
169 |
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8. STATISTICAL DESIGN AND OPTIMIZATION OF LOW VOLTAGE OPAMPS |
171 |
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8.1 DC Offset Simulation |
173 |
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8.2 Statistical Experiments |
174 |
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8.3 Optimization |
178 |
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8.4 Comparison and Discussion |
180 |
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9. CONCLUSION |
181 |
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10. ACKNOWLEDGMENTS |
181 |
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11. REFERENCES |
181 |
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12. BIOGRAPHY |
182 |
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Ultralow-Voltage Memory Circuits |
185 |
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1. INTRODUCTION |
186 |
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2. DESIGN ISSUES FOR ULTRALOW-VOLTAGE RAMS |
187 |
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2.1 Stable-Memory Cell Operation |
187 |
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2.2 Subthreshold Current Reduction |
188 |
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2.3 Suppression of or Compensation for Design- Parameter |
192 |
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2.4 Single Power-Supply and Power-Supply Standardization |
193 |
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3. DRAM CIRCUITS |
194 |
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3.1 Stable Memory - Cell Operation |
196 |
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3.2 Subthreshold Current Reduction |
201 |
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4. ULTRALOW-VOLTAGE SRAM CIRCUITS |
217 |
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5. PERSPECTIVES |
219 |
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5.1 SOI CMOS Technology |
219 |
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6 CONCLUSION |
225 |
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7. ACKNOWLEDGMENT |
225 |
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8. REFERENCES |
226 |
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Low-voltage Low-power High-speed I/O Buffers |
228 |
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1. INTRODUCTION |
228 |
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2. WHERE DOES THE POWER GO? |
229 |
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2.1 PAC |
229 |
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2.2 PDC |
229 |
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2.3 Poverlap |
230 |
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2.4 Pleakage |
230 |
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2.5 Pringing |
230 |
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3. VARIOUS TYPES OF BUFFERS |
230 |
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3.1 CMOS |
231 |
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3.2 HSTL (High-Speed Transistor Logic) |
232 |
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3.3 GTL/NTL (Gunning Transistor Logic / NMOS Transistor Logic) |
232 |
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3.4 PCML (Pseudo Current Mode Logic) |
233 |
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3.5 PECL (Pseudo Emitter Coupled Logic) |
234 |
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3.6 USB (Universal Serial Bus) |
234 |
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3.7 Matched-Impedance Buffer |
235 |
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3.8 Hyper-LVDS™ (Low-Voltage Differential Signals) |
236 |
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4. SUMMARY |
237 |
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5. CONCLUSION |
237 |
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6. REFERENCES |
237 |
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7. BIOGRAPHY |
238 |
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Microelectronics toward 2010 |
239 |
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1. INTRODUCTION |
239 |
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2. TRENDS OF SEMICONDUCTOR TECHNOLOGY |
240 |
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3. PERSPECTIVES OF KEY TECHNOLOGIES |
242 |
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4. BREAKTHROUGHS FOR THE FUTURE DEVELOPMENT |
251 |
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4.1 Reduction of the number of transistors per function |
251 |
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4.2 Use of flexible circuits for high performance |
253 |
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5. CONCLUDING REMARKS |
255 |
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6. REFERENCES |
256 |
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7. BIOGRAPHY |
256 |
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Index of Authors |
258 |
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More eBooks at www.ciando.com |
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